Growth of Gallium Nitride and Indium Gallium Nitride Nano/Microstructures via Metal Organic Chemical Vapor Deposition

MISSING IMAGE

Material Information

Title:
Growth of Gallium Nitride and Indium Gallium Nitride Nano/Microstructures via Metal Organic Chemical Vapor Deposition
Physical Description:
1 online resource (166 p.)
Language:
english
Creator:
Wood, David P
Publisher:
University of Florida
Place of Publication:
Gainesville, Fla.
Publication Date:

Thesis/Dissertation Information

Degree:
Doctorate ( Ph.D.)
Degree Grantor:
University of Florida
Degree Disciplines:
Chemical Engineering
Committee Chair:
ANDERSON,TIMOTHY J
Committee Co-Chair:
JIANG,PENG
Committee Members:
ZIEGLER,KIRK JEREMY
DAVIDSON,MARK R

Subjects

Subjects / Keywords:
gallium -- gan -- indium -- ingan -- inn -- mocvd -- nitrides -- photovoltaics
Chemical Engineering -- Dissertations, Academic -- UF
Genre:
Chemical Engineering thesis, Ph.D.
bibliography   ( marcgt )
theses   ( marcgt )
government publication (state, provincial, terriorial, dependent)   ( marcgt )
born-digital   ( sobekcm )
Electronic Thesis or Dissertation

Notes

Abstract:
Group III-nitride compound semiconductors have established success in optoelectronic devices, and have seen novel applications in the area of planar and nanostructured photovoltaics. This work attempts to expand upon past studies on the indium gallium nitride alloy carried out in the quaternary metal organic chemical vapor deposition system and in device simulations to provide a ground work for possible future device fabrication. A p-i-n heterojunction indium gallium nitride photovoltaic device model using Taurus Medici was compiled and verified against literature results. This model was then used to stepwise optimize the heterojunction with regards to deposition parameters This optimization was done to verify the feasibility of the nitride material as a photovoltaic material assuming that high quality material can be grown in the future. The model predicts that the nitride system will be able to readily compete or out preform the current developing thin film technologies. Metal organic chemical vapor deposition was used to deposit nano/microstructures of gallium nitride and indium gallium nitride. Gallium nitride depositions consisted of gallium metal clusters at temperatures below 550oC, polycrystalline gallium nitride nanotubes filled with gallium metal with diameters between 30 and 100 nanometers at temperatures between 550 and 650oC, and microrods with 1-8 micron diameters at 650oC with higher metal fluxes. Depositions at higher temperatures resulted in the formation of high roughness polycrystalline gallium nitride thin films. Indium gallium nitride nanostructures were grown at a temperature of 600oC and a total V/III ratio of 10,000. Below an indium fraction of 0.20 nanostructures were observed with diameters between 200 and 350 nanometers. The diameters were found to decrease with increasing indium fraction. Texturing in the (0001) c-plane direction was also enhanced as the indium fraction was increased. At indium fractions above 0.20 the formation of metal droplets within a porous indium gallium nitride film were observed. There are several untried deposition recipes that can yet be attempted to grow the nanostructures over the entire compositional range of the indium gallium nitride alloy.
General Note:
In the series University of Florida Digital Collections.
General Note:
Includes vita.
Bibliography:
Includes bibliographical references.
Source of Description:
Description based on online resource; title from PDF title page.
Source of Description:
This bibliographic record is available under the Creative Commons CC0 public domain dedication. The University of Florida Libraries, as creator of this bibliographic record, has waived all rights to it worldwide under copyright law, including all related and neighboring rights, to the extent allowed by law.
Statement of Responsibility:
by David P Wood.
Thesis:
Thesis (Ph.D.)--University of Florida, 2014.
Local:
Adviser: ANDERSON,TIMOTHY J.
Local:
Co-adviser: JIANG,PENG.
Electronic Access:
RESTRICTED TO UF STUDENTS, STAFF, FACULTY, AND ON-CAMPUS USE UNTIL 2016-05-31

Record Information

Source Institution:
UFRGP
Rights Management:
Applicable rights reserved.
Classification:
lcc - LD1780 2014
System ID:
UFE0046302:00001