Group Title: Transport characteristics of epitaxially grown InAs1̳-̳x̳Px̳
Title: Transport characteristics of epitaxially grown InAs1-xp-x
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Permanent Link: http://ufdc.ufl.edu/UF00098288/00001
 Material Information
Title: Transport characteristics of epitaxially grown InAs1-xp-x
Physical Description: v, 114 leaves : ill. ; 28 cm.
Language: English
Creator: Anderson, Jack Robert ( Dissertant )
Li, Sheng-San ( Thesis advisor )
Lindholm, Fredrik A. ( Reviewer )
Scott, Thomas A. ( Reviewer )
Publisher: University of Florida
Place of Publication: Gainesville, Fla.
Publication Date: 1976
Copyright Date: 1976
 Subjects
Subjects / Keywords: Electrical Engineering thesis, Ph. D
Dissertations, Academic -- UF -- Electrical Engineering
Genre: bibliography   ( marcgt )
theses   ( marcgt )
non-fiction   ( marcgt )
 Notes
Abstract: An experimental study has been made of the transport properties of InAs1-xp-x grown epitaxially from the vapor phase onto semi-insulating GaAs substrates. The hydrogen carrier gas flow rate was varied for four sets of samples of InAs0.16p0.39 with changing thickness between sets. A fifth set was investigated with varying composition. Resistivity and Hall effect measurements from 3K to 300K yielded electron mobilities as high as 13,100 2 cm /volt-sec at 77K and electron concentrations from 1.5xl0 16 cm~ 3 to 8xl0 16cm~ 3 at 300K. Transport at low temperatures (T<30K) is attributed to the formation of a donor impurity band.
Thesis: Thesis (Ph. D.)--University of Florida, 1976.
Bibliography: Includes bibliographical references (leaves 111-113).
General Note: "1̳-̳x̳ " and "x̳" in title are subscript.
General Note: Typescript.
General Note: Vita.
Statement of Responsibility: by Jack Robert Anderson.
 Record Information
Bibliographic ID: UF00098288
Volume ID: VID00001
Source Institution: University of Florida
Holding Location: University of Florida
Rights Management: All rights reserved by the source institution and holding location.
Resource Identifier: alephbibnum - 004065104
oclc - 212869505

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