Material Information

Title:
(110) and (100) Sidewall-oriented FinFETs: A performance and reliability investigation
Creator:
SEMATECH, 257 Fuller Road, Suite 2200, Albany, NY 12203, United States ( host institution )
Young, C.D. ( author )
Akarvardar, K. ( author )
Baykan, M.O. ( UF author )
Matthews, K. ( author )
Ok, I. ( author )
Ngai, T. ( author )
Ang, K.-W. ( author )
Pater, J. ( author )
Smith, C.E. ( author )
Hussain, M.M. ( author )
Majhi, P. ( author )
Hobbs, C. ( author )
Affiliation:
SEMATECH, 257 Fuller Road, Suite 2200, Albany, NY 12203, United States
Publisher:
Elsevier Ltd.
Publication Date:
Copyright Date:
2012
Language:
English
Physical Description:
Pages 2-10

Subjects

Subjects / Keywords:
FinFET
Sidewall
Orientation dependence
Mobility
NBTI
HCI
Genre:
article ( sobekcm )

Notes

Abstract:
The performance and reliability of (100) and (110) sidewall, silicon-on-insulator (SOI) FinFETs with a Hf-based gate dielectric were evaluated. Unlike the typical planar MOSFET mobility orientation dependence, (110) FinFET sidewalls do not impair electron mobility and result in good short channel performance compared to (100) FinFET sidewall devices. Hot carrier injection (HCI) degradation was also investigated with nMOS and pMOS high-κ FinFETs on both sidewall surface orientations. Impact ionization at the source, as well as at the traditional drain side, was found to enhance HCI degradation when gate voltage (Vg)=drain voltage (Vd). The degradation becomes more pronounced as the gate length decreases, with a negligible dependence on substrate orientation. However, the orientation dependence of negative bias temperature instability (NBTI) on FinFETs demonstrates that the (110) orientation is slightly worse than (100). The kinetics of ΔNIT(t) under negative bias stress conditions suggests the interface trap density (NIT) is generated by a mechanism similar to that in planar devices. ( en )
General Note:
2016-12-23T18:52:10Z

Record Information

Source Institution:
Elsevier Ltd.
Holding Location:
University of Florida
Rights Management:
This item is licensed with the Creative Commons Attribution No Derivatives License. This license allows for redistribution, commercial and non-commercial, as long as it is passed along unchanged and in whole, with credit to the author. © 2012
Resource Identifier:
S0038110112001827 ( pii )
10.1016/j.sse.2012.05.045 ( doi )

Related Items

Host material:
Solid-State Electronics